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| (R) STTH506DTI Tandem 600V HYPERFAST BOOST DIODE MAJOR PRODUCTS CHARACTERISTICS 1 2 IF(AV) VRRM Tj (max) VF (max) IRM (typ.) trr (typ.) 5A 600 V 150 C 2.4 V 3.6 A 12 ns 2 1 FEATURES AND BENEFITS ESPECIALLY SUITED AS BOOST DIODE IN CONTINUOUS MODE POWER FACTOR CORRECTORS AND HARD SWITCHING CONDITIONS DESIGNED FOR HIGH dIF/dt OPERATION. HYPERFAST RECOVERY CURRENT TO COMPETE WITH SiC DEVICES. ALLOWS DOWNSIZING OF MOSFET AND HEATSINKS INTERNAL CERAMIC INSULATED DEVICES WITH EQUAL THERMAL CONDITIONS FOR BOTH 300V DIODES INSULATION (2500VRMS) ALLOWS PLACEMENT ON SAME HEATSINK AS MOSFET FLEXIBLE HEATSINKING ON COMMON OR SEPARATE HEATSINK STATIC AND DYNAMIC EQUILIBRIUM OF INTERNAL DIODES ARE WARRANTED BY DESIGN Package Capacitance: C=7pF s s s s s s Insulated TO-220AC DESCRIPTION The TURBOSWITCH "H" is an ultra high performance diode composed of two 300V dice in series. TURBOSWITCH "H" family drastically cuts losses in the associated MOSFET when run at high dIF/dt. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IFSM Ipeak Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Surge non repetitive forward current Peak current waveform Storage temperature range Maximum operating junction temperature tp = 10 ms sinusoidal = 0.15 Tc = 140C Value 600 14 60 8 -65 +150 + 150 Unit V A A A C C October 2003 - Ed: 2A 1/5 STTH506DTI THERMAL AND POWER DATA Symbol Rth (j-c) Parameter Junction to case thermal resistance Test conditions Value 3.0 Unit C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR * Parameter Reverse leakage current Tests Conditions VR = VRRM Tj = 25C Tj = 125C VF ** Forward voltage drop IF = 5 A Tj = 25C Tj = 150C Pulse test : * tp = 100 ms, < 2 % ** tp = 380 s, < 2% Min. Typ. Max. 6 Unit A 8 60 3.6 V 1.95 2.4 To evaluate the maximum conduction losses use the following equation : P = 1.7 x IF(AV) + 0.14 IF2(RMS) DYNAMIC CHARACTERISTICS Symbol trr Parameter Reverse recovery time IF = 0.5 A IR = 1 A Tests Conditions Irr = 0.25 A Tj = 25C Min. Typ. 12 25 Tj = 125C 3.6 0.4 45 4.5 A nC Max. Unit ns IF = 1 A dIF/dt = - 50 A/s VR = 30 V IRM S Qrr Reverse recovery VR = 400 V IF = 5 A current dIF/dt = -200 A/s Reverse recovery softness factor Reverse recovery charges TURN-ON SWITCHING CHARACTERISTICS Symbol tfr VFP Parameter Tests Conditions Tj = 25C Tj = 25C Min. Typ. Max. 100 7 Unit ns V Forward recovery IF = 5 A dIF/dt = 100 A/s time VFR = 1.1 x VF max Transient peak forward recovery voltage IF = 5 A dIF/dt = 100 A/s 2/5 STTH506DTI Fig. 1: Conduction losses versus average current. Fig. 2: Forward voltage drop versus forward current. IFM(A) = 0.1 = 0.2 = 0.5 = 0.05 =1 100 90 80 70 60 50 40 30 Tj=125C (maximum values) P(W) 20 18 16 14 12 10 8 6 Tj=125C (typical values) Tj=25C (maximum values) T 4 2 0 0 1 2 3 4 5 20 10 IF(AV)(A) =tp/T 6 tp 0 7 0 1 2 3 4 VFM(V) 5 6 7 8 Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) 1.0 0.9 0.8 0.7 0.6 0.5 = 0.5 Fig. 4: Peak reverse recovery current versus dIF/dt (typical values). IRM(A) 9 8 7 IF=0.5 x IF(AV) VR=400V Tj=125C IF=IF(AV) IF=2 x IF(AV) 6 5 4 IF=0.25 x IF(AV) 0.4 0.3 0.2 = 0.2 = 0.1 3 T 2 1 0 Single pulse 0.1 0.0 1.E-03 1.E-02 tp(s) 1.E-01 =tp/T tp 1.E+00 dIF/dt(A/s) 0 50 100 150 200 250 300 350 400 450 500 Fig. 5: Reverse recovery time versus dIF/dt (typical values). trr(ns) 50 45 IF=2 x IF(AV) VR=400V Tj=125C Fig. 6: Reverse recovery charges versus dIF/dt (typical values). Qrr(nC) 100 90 80 VR=400V Tj=125C IF=2 x IF(AV) 40 35 30 25 20 15 10 5 0 0 50 100 150 200 250 300 350 400 450 500 IF=IF(AV) IF=0.5 x IF(AV) IF=IF(AV) 70 60 50 40 30 20 IF=0.5 x IF(AV) dIF/dt(A/s) 10 0 0 50 100 150 dIF/dt(A/s) 200 250 300 350 400 450 500 3/5 STTH506TDI Fig. 7: Reverse recovery softness factor versus dIF/dt (typical values). S 0.60 IF=IF(AV) VR=400V Tj=125C Fig. 8: Relative variation of dynamic parameters versus junction temperature (reference: Tj = 125C). 2.50 2.25 2.00 1.75 1.50 S IF=IF(AV) VR=400V Reference: Tj=125C 0.50 0.40 1.25 1.00 0.75 IRM 0.30 0.50 0.25 dIF/dt(A/s) 0.20 0 50 100 150 200 250 300 350 400 450 500 Tj(C) 25 50 75 100 125 0.00 Fig. 9: Transient peak forward voltage versus dIF/dt (typical values). VFP(V) 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 0 Fig. 10: Forward recovery time versus dIF/dt (typical values). tfr(ns) 200 180 160 140 120 100 80 60 40 IF=IF(AV) VFR=1.1 x VF max. Tj=125C IF=IF(AV) Tj=125C dIF/dt(A/s) 50 100 150 200 250 300 350 400 450 500 20 0 0 100 dIF/dt(A/s) 200 300 400 500 Fig. 11: Junction capacitance versus reverse voltage applied (typical values). C(pF) 100 F=1MHz VOSC=30mVRMS Tj=25C 10 VR(V) 1 1 10 100 1000 4/5 STTH506DTI PACKAGE MECHANICAL DATA TO-220AC B DIMENSIONS C b2 REF. A F Millimeters 15.20 3.75 13.00 10.00 0.61 1.23 4.40 0.49 2.40 4.80 6.20 3.75 2.65 1.14 2.60 14.00 0.511 10.40 0.393 0.88 0.024 1.32 0.048 4.60 0.173 0.70 0.019 2.72 0.094 5.40 0.189 6.60 0.244 3.85 0.147 2.95 0.104 1.70 0.044 15.90 0.598 Inches 0.625 0.147 0.551 0.409 0.034 0.051 0.181 0.027 0.107 0.212 0.259 0.151 0.116 0.066 0.102 Min. Typ. Max. Min. Typ. Max. L a1 a2 B b1 b2 C c1 c2 e I A l4 a1 c2 l2 a2 F I I4 L 15.80 16.40 16.80 0.622 0.646 0.661 b1 e M c1 l2 M Ordering code STTH506DTI s Marking STTH506DTI Package TO-220AC Weight 2.3 g. Base qty 50 Delivery mode Tube s s s Cooling method: C Recommended torque value: 0.8 N.m. Maximum torque value: 1 N.m. Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2003 STMicroelectronics - All rights reserved. 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